Page Comparison

Physical Fuse Selection

In regulation 8.5.b, it states, “All other wiring branching off the main bus circuit must have properly sized fuses. Fuses must be located near the branch point, either within the same enclosure or before a reduction in rated conductor ampacity.” This means we can't rely solely on the eFuse, and we need to place a physical fuse in series to act as backup protection.

The physical fuse will be selected to a current specification above the maximum of the eFuse so that the eFuse, which requires minimal manual intervention to reset, should trip first and save the physical fuse.

As the fuse will only be required to act when there is a failure to do so by the eFuse, a very rare occurrence, we will be prioritizing size in our selection of physical fuse.

eFuse Parts Selection

eFuse IC: TPS25983 (

View file
name tps25983.pdf

)

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Calculated Component Values for eFuse Protection Functions

Overcurrent Limit Resistor

According to the datasheet, the formula for determining the resistance of a particular current limit is…

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Overcurrent Blanking Interval Capacitor

The overcurrent blanking interval is the period where a current past the limit threshold is ignored for a time period. This is used to help deal with transients and avoid false alarms.

The overcurrent blanking interval is defined as…

$t_{ITIMER} (ms) = \frac{C_{ITIMER} (nF) * \Delta V_{ITIMER} (V)}{I_{ITIMER} (\mu A)}$

Where the capacitance for a specific blanking interval is…

$C_{ITIMER} (nF) = \frac{t_{ITIMER} (ms) * I_{ITIMER} (\mu A)}{\Delta V_{ITIMER} (V)} = \frac{t_{ITIMER} (ms) * I_{ITIMER} (A)}{\Delta V_{ITIMER} (V) * 10^6}$

We can find I_ITIMER and ΔV_ITIMER in the Electrical Characteristics on p. 8 of the eFuse datasheet. With their typical values, we can simplify this to be…

$C_{ITIMER} (nF) = \frac{t_{ITIMER} (ms)}{0.467}$

Additionally, we can leave the pin open for no blanking interval. Do not short the ITIMER pin to ground.

Decision: We will leave the pin open for no blanking interval by default and determine proper blanking intervals on a case-by-case basis depending on the amount of inrush.

Current Monitoring Resistor

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$ R_{IMON} (\Omega) = \frac{V_{IMON}(\mu V)}{I_{LOAD} (A) * G_{IMON}(\mu A/A)} = \frac{V_{IMON}(V)}{I_{LOAD} (A) * G_{IMON}(\mu A/A)*10^610^{-6}}$

• Our ADC can read a maximum value of 32.3 V (most likely, need to confirm5V (based on voltage reference provided to the ADC), so V_IMON = 3.3 V2.5 V.

  • Table 8-2 of the eFuse datasheet recommends using a lower V_IMON to “ensure the IMON pin internal amplifier has sufficient headroom to operate linearly.” For V_IN > 5V, it recommends a maximum V_IMON of 3.3V, which is met with our selection.

• The maximum ILOAD of the eFuse is 18 A. Although most, if not all, of our outputs will not utilize that full quantity, we will

On page 24 of the TPS25983 datasheet, the following formula is also shown in terms of

Retry # of Attempts

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• design for the full range of possible values to avoid having to resolder IMON resistors in the future. This will reduce our precision when reading the current as a tradeoff.

$R_{IMON}(\Omega) = \frac{2.5*10^6}{18 * 243} = 571.559 \Omega \rightarrow 549 \Omega $

To measure the full range of currents, we need a 571.559 Ω resistor. Finding a close-by standard resistor size, we moved down to 549 Ω ensure that in the event of an overcurrent event greater than 18A, we’d still be able to measure it to a degree without exceeding the ADC’s limits (or even worse, damaging the ADC IC). With 549 Ω, the largest current we can measure is 18.740 A nominal (with 1% resistor, 18.554 - 18.929 A).

Read the voltage drop across the resistor to find the current through the eFuse. Add a low-pass filter to smooth the results and prevent aliasing in the ADC conversion.

Result: Install a 549 Ω 1% resistor from IMON to ground.

Retry Delay

The delay before retry attempts after a fault is determined by…

$t_{RETRY\_DLY} (\mu s) = \frac{128 * (C_{RETRY\_DLY} (pF) + 4 pF) * V_{RETRY\_DLY\_HYS} (V)}{I_{RETRY\_DLY} (\mu A)}$

Solving for the capacitance at the RETRY_DLY pin…

$C_{RETRY\_DLY} (pF) = \frac{t_{RETRY\_DLY} (\mu s)*I_{RETRY\_DLY} (\mu A)}{128*V_{RETRY\_DLY\_HYS} (V)} - 4pF$

(or just use the table at the end of the Retry # of Attempts section for some common values.)

Note: the Retry # of Attempts capacitance depends on this value. If a change is made here, NRETRY needs to be reevaluated.

Result: We will implement a 915 ms delay, resulting in a 22 nF capacitor to ground at the RETRY_DLY pin.

Retry # of Attempts

The capacitance value for number of retry attempts depends on what capacitance you picked for retry delay.

$N_{RETRY} = \frac{4 * I_{RETRY\_DLY}(\mu A) * C_{NRETRY}(pF)}{I_{NRETRY}(\mu A) * (C_{RETRY\_DLY}(pF) + 4pF)}$

Solving for the amount of capacitance for a certain N retries…

$C_{NRETRY}(pF)= \frac{N_{RETRY}*I_{NRETRY}(\mu A) * (C_{RETRY\_DLY}(pF) + 4pF)}{4*I_{RETRY\_DLY}(\mu A)}$ 

Note that N can only consist of the set of values {(0), 4, 16, 64, 256, 1024, inf}. Any value not equal to these will be rounded up.

For an infinite amount of attempts, short NRETRY to ground. For no auto-retry (latch off), short RETRY_DLY to ground (NRETRY does not matter).

For a set of common RETRY_DLY and NRETRY values…

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Result: We will implement 4 retry attempts. With the previously selected 915 ms delay between each, we will place no capacitor between NRETRY and ground (open).

Slew Rate

The integrated output slew rate helps control large inrush current. The formula for determining the slew rate of a particular load capacitance is…

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$ V_{IN}(OV) = \frac{V_{OV}(R)*(R1+R2)}{R2}$

The eFuse turns OFF the power to the output when the voltage at the OVLO pin is greater than the OVLO rising threshold, VOV(R). The output power is turned ON again after the voltage at the OVLO pin falls below the OVLO falling threshold, VOV(F).

To have a overvoltage lockout threshold at VIN = 12.8V:

$ 12.8 = \frac{1.21*(R1+R2)}{R2}$

To achieve this, we can use R1 = 976k and R2 = 102k.

Gate Resistance (for external FET)

Picked from reference design.

External FET: CSD17573Q5B (

View file
name csd17573q5b.pdf

)

The TP25983 offers the ability to drive the gate of an external FET to block reverse current.

This MOSFET was picked because it is what’s used in TI’s development board for the eFuse we’re using. It wasn’t clear what requirements there were for external FETs on the eFuse datasheet so we’re using a MOSFET that is known to work. This also means we don’t have to decide the gate resistance ourselves.

• We need to ensure whatever voltage the BGATE pin is at is sufficient for the MOSFET of choice so that the MOSFET stays in the linear region. However, the voltage BGATE works at is not clear. Page 35 of the eFuse datasheet states that “The dVdt capacitor is subjected to typically VIN + 4 V during startup”, but unsure about regular operation.

Digital POT IC: AD5258BRMZ1 (

View file
name AD5258.pdf

)

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Another potential option could be the AD8400. It has a smaller package, more resistance positions, and a smaller package, but is significantly more expensive.

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I2C Mux:

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PCA9544A

• First one that showed up when Googled for I2C mux. Seems to fit purpose.

Monitoring Parts Selection

SOM:

fwef

Analog MUX: ADS7953SBDBT (

View file
name ads7953.pdf

)

• Same as what BPS is using.

Reference Voltage: MIC5317-2.5

• Same as what BPS is using.

SPI I/O Expander: MCP23S17 (

View file
name MCP23017-Data-Sheet-DS20001952.pdf

)

(I2C equivalent: MCP23017)

• Offers both SPI and I2C variant.

• Has interrupt pin(s).

• Has addressing system in SPI which provides more flexibility.